Glass-silicon Anodic Bonding for the Reduction of Structural Distortion
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چکیده
منابع مشابه
Study on the Glass Silicon Anodic Direct Bonding Parameters
By MEMS packaging test platform for bonding process of bonding temperature and bonding time, and test silicon specifications experimental study. Experimental results indicate that when the bonding voltage of 1200V, bonding temperature of 445 0 C to 455 0 C, bonding time is 60s, the void fraction is less than 5%. Glass and silicon wafer bonding quality can achieve the best. The experimental resu...
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ژورنال
عنوان ژورنال: IEEJ Transactions on Fundamentals and Materials
سال: 1995
ISSN: 0385-4205,1347-5533
DOI: 10.1541/ieejfms1990.115.12_1208